ROHM RSQ035P03HZGTR MOSFETs
MOSFET P-CH 30V 3.5A TSMT6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RSQ035P03HZGTR
Base Model
Detailed Description
MOSFET P-CH 30V 3.5A TSMT6
Package
SC-95-6
Lifecycle Status
Active
Datasheet
RSQ035P03HZGTR Datasheet
Quick Jump:
Technical Specifications
ROHM RSQ035P03HZGTR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3.5 A
Rds on Drain Source Resistance
65 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RSQ035P03HZGTR vs RSQ035P03TR vs RSQ015P10TR vs RSQ030P03TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 3.5 A | 3.5 A | 1.5 A | 3 A |
| Package | SC-95-6 | SOT-23-6Thin,TSOT-23-6 | SOT-23-6Thin,TSOT-23-6 | SOT-23-6 |
| Pd Power Dissipation | 1.25 W | 1.25 W | 1.25 W | 1.25 W |
| Qg Gate Charge | 9.2 nC | 9.2 nC | 17 nC | 6 nC |
| Rds on Drain Source Resistance | 65 mOhms | 700 mOhms | 470 mOhms | 100 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | P-Channel | P-Channel | P-Channel | P-Channel |
| Action |
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