ROHM RSQ015P10TR MOSFETs
MOSFET P-CH 100V 1.5A TSMT6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RSQ015P10TR
Detailed Description
MOSFET P-CH 100V 1.5A TSMT6
Package
SOT-23-6Thin,TSOT-23-6
Lifecycle Status
Active
Datasheet
RSQ015P10TR Datasheet
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Technical Specifications
ROHM RSQ015P10TR MOSFETs technical specifications.
General
Series
RSQ015P10
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
1.5 A
Rds on Drain Source Resistance
470 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (RSQ015P10TR vs RSQ035P03HZGTR vs RSQ015N06TR vs RSQ035P03TR)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 1.5 A | 3.5 A | 1.5 A | 3.5 A |
| Package | SOT-23-6Thin,TSOT-23-6 | SC-95-6 | SOT-23-6 | SOT-23-6Thin,TSOT-23-6 |
| Pd Power Dissipation | 1.25 W | 1.25 W | 1.25 W | 1.25 W |
| Qg Gate Charge | 17 nC | 9.2 nC | 3.5 nC | 9.2 nC |
| Rds on Drain Source Resistance | 470 mOhms | 65 mOhms | 210 mOhms | 700 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | P-Channel | P-Channel | N-Channel | P-Channel |
| Action |
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