ROHM RSQ030P03TR MOSFETs
MOSFET P-CH 30V 3A TSMT6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RSQ030P03TR
Detailed Description
MOSFET P-CH 30V 3A TSMT6
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
RSQ030P03TR Datasheet
Quick Jump:
Technical Specifications
ROHM RSQ030P03TR MOSFETs technical specifications.
General
Series
RSQ030P03
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3 A
Rds on Drain Source Resistance
100 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RSQ030P03TR vs RSQ035P03HZGTR vs RSQ015N06TR vs RSQ035P03TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 13 ns | 25 ns | 10 ns | 35 ns |
| ID Continuous Drain Current | 3 A | 3.5 A | 1.5 A | 3.5 A |
| Package | SOT-23-6 | SC-95-6 | SOT-23-6 | SOT-23-6Thin,TSOT-23-6 |
| Pd Power Dissipation | 1.25 W | 1.25 W | 1.25 W | 1.25 W |
| Qg Gate Charge | 6 nC | 9.2 nC | 3.5 nC | 9.2 nC |
| Rds on Drain Source Resistance | 100 mOhms | 65 mOhms | 210 mOhms | 700 mOhms |
| Rise Time | 13 ns | 35 ns | 9 ns | 35 ns |
| Action |
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