ROHM RQ3E120GNTB MOSFETs
MOSFET N-CH 30V 12A 8HSMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ3E120GNTB
Detailed Description
MOSFET N-CH 30V 12A 8HSMT
Package
8-PowerVDFN
Lifecycle Status
Active
Datasheet
RQ3E120GNTB Datasheet
Quick Jump:
Technical Specifications
ROHM RQ3E120GNTB MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
8.8 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
2.5 V
Alternate Parts Comparison (RQ3E120GNTB vs RQ6E045BNTCR vs RQ5C025TPTL vs RQ3E075ATTB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 3.4 ns | 6 ns | 20 ns | 27 ns |
| ID Continuous Drain Current | 12 A | 4.5 A | 2.5 A | 18 A |
| Package | 8-PowerVDFN | SOT-23-6 | SOT-346-3 | HSMT-8 |
| Pd Power Dissipation | 2 W | 1.25 W | 1 W | 15 W |
| Qg Gate Charge | 10 nC | 8.4 nC | 7 nC | 21 nC |
| Rds on Drain Source Resistance | 8.8 mOhms | 21 mOhms | 95 mOhms | 17.4 mOhms |
| Rise Time | 4.5 ns | 11 ns | 18 ns | 9.2 ns |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
