ROHM RQ3E075ATTB MOSFETs
MOSFET P-CHANNEL 30V 18A 8HSMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ3E075ATTB
Detailed Description
MOSFET P-CHANNEL 30V 18A 8HSMT
Package
HSMT-8
Lifecycle Status
Active
Datasheet
RQ3E075ATTB Datasheet
Quick Jump:
Technical Specifications
ROHM RQ3E075ATTB MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
18 A
Rds on Drain Source Resistance
17.4 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RQ3E075ATTB vs RQ5L015SPTL vs RQ3E120GNTB vs RQ5C060BCTCL)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 27 ns | 10 ns | 3.4 ns | 72 ns |
| Forward Transconductance Min | 7 S | 1.8 S | 10 S | 9 S |
| ID Continuous Drain Current | 18 A | 1.5 A | 12 A | 6 A |
| Package | HSMT-8 | SC-96 | 8-PowerVDFN | SOT-346-3 |
| Pd Power Dissipation | 15 W | 1 W | 2 W | 1 W |
| Qg Gate Charge | 21 nC | 10 nC | 10 nC | 19.2 nC |
| Rds on Drain Source Resistance | 17.4 mOhms | 360 mOhms | 8.8 mOhms | 16.1 mOhms |
| Action |
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