ROHM RQ3C150BCTB MOSFETs
MOSFET P-CHANNEL 20V 30A 8HSMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ3C150BCTB
Detailed Description
MOSFET P-CHANNEL 20V 30A 8HSMT
Package
8-PowerVDFN
Lifecycle Status
Active
Datasheet
RQ3C150BCTB Datasheet
Quick Jump:
Technical Specifications
ROHM RQ3C150BCTB MOSFETs technical specifications.
General
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Current Continuous Drain ID 25 C
30A (Tc)
Drain to Source Voltage Vdss
20 V
Alternate Parts Comparison (RQ3C150BCTB vs RQ3E100BNTB vs RQ3E120ATTB vs RQ3E180GNTB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | ROHS3 Compliant | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 280 ns | 10 ns | 95 ns | 10.2 ns |
| ID Continuous Drain Current | 30 A | 13.5 A | 12 A | 18 A |
| Package | Tape & Reel (TR) | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
| Pd Power Dissipation | 20 W | 15 W | 2 W | 2 W |
| Qg Gate Charge | 60 nC | 22 nC | 62 nC | 22.4 nC |
| Rds on Drain Source Resistance | 6.7 mOhms | 7.7 mOhms | 61 mOhms | 4.3 mOhms |
| Rise Time | 80 ns | 28 ns | 30 ns | 6.9 ns |
| Action |
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