ROHM RQ3E120ATTB MOSFETs
MOSFET P-CH 30V 12A 8HSMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ3E120ATTB
Detailed Description
MOSFET P-CH 30V 12A 8HSMT
Package
8-PowerVDFN
Lifecycle Status
Active
Datasheet
RQ3E120ATTB Datasheet
Quick Jump:
Technical Specifications
ROHM RQ3E120ATTB MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
39 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
61 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
2.5 V
Alternate Parts Comparison (RQ3E120ATTB vs RQ6E035ATTCR vs RQ6E045BNTCR vs RQ5C025TPTL)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 95 ns | 20 ns | 6 ns | 20 ns |
| ID Continuous Drain Current | 12 A | 3.5 A | 4.5 A | 2.5 A |
| Package | 8-PowerVDFN | SOT-23-6 | SOT-23-6 | SOT-346-3 |
| Pd Power Dissipation | 2 W | 1.25 W | 1.25 W | 1 W |
| Qg Gate Charge | 62 nC | 10 nC | 8.4 nC | 7 nC |
| Rds on Drain Source Resistance | 61 mOhms | 70 mOhms | 21 mOhms | 95 mOhms |
| Rise Time | 30 ns | 12 ns | 11 ns | 18 ns |
| Action |
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