ROHM RQ6E045BNTCR MOSFETs
MOSFET N-CH 30V 4.5A TSMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ6E045BNTCR
Detailed Description
MOSFET N-CH 30V 4.5A TSMT
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
RQ6E045BNTCR Datasheet
Quick Jump:
Technical Specifications
ROHM RQ6E045BNTCR MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
4.5 A
Rds on Drain Source Resistance
21 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RQ6E045BNTCR vs RQ5L015SPTL vs RQ6C050UNTR vs RQ6E045RPTR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 6 ns | 10 ns | 100 ns | 65 ns |
| ID Continuous Drain Current | 4.5 A | 1.5 A | 5 A | 4.5 A |
| Package | SOT-23-6 | SC-96 | SOT-23-6 | SOT-23-6 |
| Pd Power Dissipation | 1.25 W | 1 W | 1.25 W | 1.25 W |
| Qg Gate Charge | 8.4 nC | 10 nC | 12 nC | 14 nC |
| Rds on Drain Source Resistance | 21 mOhms | 360 mOhms | 22 mOhms | 35 mOhms |
| Rise Time | 11 ns | 10 ns | 25 ns | 35 ns |
| Action |
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