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onsemi SMMUN2213LT1G BJTs

NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL

215 ActiveonsemiSMMUN2213LTTO-236-3, SC-59, SOT-23-3$0.37
SMMUN2213LT1G - No Image Available

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SMMUN2213LT1G
Manufacturer
Part Number (MPN)
SMMUN2213LT1G
Base Model
Detailed Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF SMMUN2213LT1G Datasheet
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Ordering Code Family

SMMUN2213LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SMMUN2213LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
246 mW
Transistor Type
NPN - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA

Alternate Parts Comparison (SMMUN2213LT1G vs SMMUN2213LT3G vs SMMBFJ175LT1G vs NSVBC857BLT3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS PREBIAS NPN 50V SOT23-3TRANS PREBIAS NPN 50V SOT23-3JFET P-CH 30V SOT23-3TRANS PNP 45V 0.1A SOT23-3
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Power Max246 mW246 mW225 mW225 mW
Current Collector Cutoff Max500nA500nA--15nA (ICBO)
Current Collector IC Max100 mA100 mA--100 mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V80 @ 5mA, 10V--220 @ 2mA, 5V
GradeAutomotiveAutomotiveAutomotive--
QualificationAEC-Q101AEC-Q101AEC-Q101--
Transistor TypeNPN - Pre-BiasedNPN - Pre-Biased--PNP
Action

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