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onsemi SMMBTA06LT3G BJTs

NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL

30,000 ActiveonsemiSMMBTA06LTTO-236-3, SC-59, SOT-23-3$0.07
SMMBTA06LT3G TO-236-3, SC-59, SOT-23-3 package illustration

Same model may have multiple batches, images only for reference.

SMMBTA06LT3G
Manufacturer
Part Number (MPN)
SMMBTA06LT3G
Base Model
Detailed Description
NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF SMMBTA06LT3G Datasheet
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Ordering Code Family

SMMBTA06LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SMMBTA06LT3G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 1V
Power Max
225 mW
Frequency Transition
100MHz
Transistor Type
NPN
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
80 V

Related Parts Comparison (SMMBTA06LT3G vs SMMBTA06LT1G vs SMMBFJ175LT1G vs NSVMMUN2112LT1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Power Max225 mW225 mW225 mW246 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
Current Collector Cutoff Max100nA100nA--500nA
Current Collector IC Max500 mA500 mA--100 mA
Dc Current Gain Hfe Min IC Vce100 @ 100mA, 1V100 @ 100mA, 1V--60 @ 5mA, 10V
Transistor TypeNPNNPN--PNP - Pre-Biased
Vce Saturation Max Ib IC250mV @ 10mA, 100mA250mV @ 10mA, 100mA--250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max80 V80 V--50 V
Action

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