onsemi SMMBT3906LT1G BJTs
PNP BJT Transistor 40V 200mA 300mW SOT-23

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMMBT3906LT1G
Base Model
Detailed Description
PNP BJT Transistor 40V 200mA 300mW SOT-23
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
SMMBT3906LT1G Datasheet
Quick Jump:
Technical Specifications
onsemi SMMBT3906LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
300 mW
Frequency Transition
250MHz
Grade
Automotive
Transistor Type
PNP
Qualification
AEC-Q101
Current Collector IC Max
200 mA
Alternate Parts Comparison (SMMBT3906LT1G vs SMMBT3906LT3G vs SMMBT4403LT1G vs SMMBT2222ALT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -55 °C ~ 150 °C | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | 3 | -- |
| RoHS | -- | -- | Compliant | -- |
| Lifecycle Status | Active | -- | Active | Active |
| China ROHS | -- | -- | Compliant | -- |
| Collector Base Voltage Vcbo | -- | -- | 40 V | -- |
| Collector Emitter Breakdown Voltage | -- | -- | 40 V | -- |
| Collector Emitter Saturation Voltage | -- | -- | 750 mV | -- |
| Collector Emitter Voltage Vceo | -- | -- | 40 V | -- |
| Element Configuration | -- | -- | Single | -- |
| Emitter Base Voltage Vebo | -- | -- | -5 V | -- |
| Gain Bandwidth | -- | -- | 200 MHz | -- |
| Action |
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