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onsemi SMMBT3904LT3G BJTs

NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL

9,180 ActiveonsemiSMMBT3904LTTO-236-3, SC-59, SOT-23-3$0.06
SMMBT3904LT3G - No Image Available

Same model may have multiple batches, images only for reference.

SMMBT3904LT3G
Manufacturer
Part Number (MPN)
SMMBT3904LT3G
Base Model
Detailed Description
NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF SMMBT3904LT3G Datasheet
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Ordering Code Family

SMMBT3904LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SMMBT3904LT3G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
300 mW
Frequency Transition
300MHz
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101
Current Collector IC Max
200 mA

Alternate Parts Comparison (SMMBT3904LT3G vs SMMBT3904LT1G vs SMMBT4403LT1G vs SMMBT2222ALT3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-55°C ~ 150°C (TJ)---55 °C ~ 150 °C-55°C ~ 150°C (TJ)
Number of Pins----3--
RoHS----Compliant--
Lifecycle StatusActive--ActiveActive
China ROHS----Compliant--
Collector Base Voltage Vcbo----40 V--
Collector Emitter Breakdown Voltage----40 V--
Collector Emitter Saturation Voltage----750 mV--
Collector Emitter Voltage Vceo----40 V--
Element Configuration----Single--
Emitter Base Voltage Vebo-----5 V--
Gain Bandwidth----200 MHz--
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