onsemi NVH4L022N120M3S MOSFETs

Name: NVH4L022N120M3S
Brand: onsemi
SKU: NVH4L022N120M3S
Price: 103.7824 USD
Availability: InStock

SIC MOS TO247-4L 22MOHM 1200V

1 ActiveonsemiTO-247-4L$103.78

Same model may have multiple batches, images only for reference.

NVH4L022N120M3S

Manufacturer

onsemi

Part Number (MPN)

NVH4L022N120M3S

Technical Specifications

onsemi NVH4L022N120M3S MOSFETs technical specifications.

General

Package / Case

TO-247-4

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 175°C (TJ)

Lifecycle Status

Active

Gate Charge Qg Max Vgs

151 nC @ 18 V

Vgs Max

+22V, -10V

Input Capacitance Ciss Max Vds

3175 pF @ 800 V

Power Dissipation Max

352W (Tc)

Fet Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Alternate Parts Comparison (NVH4L022N120M3S vs NVH4L060N065SC1 vs NTH4L020N120SC1 vs NTH4L040N120SC1)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	onsemiNVH4L022N120M3S	onsemiNVH4L060N065SC1	onsemiNTH4L020N120SC1	onsemiNTH4L040N120SC1
Package / Case	TO-247-4	TO-247-4	TO-247-4	TO-247-4
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Lifecycle Status	Active	Active	Active	Active
Current Continuous Drain ID 25 C	68A (Tc)	47A (Tc)	102A (Tc)	58A (Tc)
Drain to Source Voltage Vdss	1200 V	650 V	1200 V	1200 V
Drive Voltage Max Rds on Min Rds on	18V	15V, 18V	20V	20V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Gate Charge Qg Max Vgs	151 nC @ 18 V	74 nC @ 18 V	220 nC @ 20 V	106 nC @ 20 V
Input Capacitance Ciss Max Vds	3175 pF @ 800 V	1473 pF @ 325 V	2943 pF @ 800 V	1762 pF @ 800 V
Power Dissipation Max	352W (Tc)	176W (Tc)	510W (Tc)	319W (Tc)
Rds on Max ID Vgs	30mOhm @ 40A, 18V	70mOhm @ 20A, 18V	28mOhm @ 60A, 20V	56mOhm @ 35A, 20V
Action	RFQ	RFQ	RFQ	RFQ

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