onsemi NTH4L040N120M3S MOSFETs
SILICON CARBIDE (SIC) MOSFET ELI
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTH4L040N120M3S
Detailed Description
SILICON CARBIDE (SIC) MOSFET ELI
Package
TO-247-4L
Lifecycle Status
Active
Datasheet
NTH4L040N120M3S Datasheet
Quick Jump:
Technical Specifications
onsemi NTH4L040N120M3S MOSFETs technical specifications.
General
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.4V @ 10mA
Gate Charge Qg Max Vgs
75 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
1700 pF @ 800 V
Fet Type
N-Channel
Power Dissipation Max
231W (Tc)
Alternate Parts Comparison (NTH4L040N120M3S vs NTH4L027N65S3F vs NTH4L075N065SC1 vs NTH4L040N120SC1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-4 | TO-247-4 | TO-247-4 | TO-247-4 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 54A (Tc) | 75A (Tc) | 38A (Tc) | 58A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 1200 V | 650 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 18V | 10V | 15V, 18V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 75 nC @ 18 V | 259 nC @ 10 V | 61 nC @ 18 V | 106 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 1700 pF @ 800 V | 7690 pF @ 400 V | 1196 pF @ 325 V | 1762 pF @ 800 V |
| Action |
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