onsemi NTH4L020N090SC1 MOSFETs
SILICON CARBIDE MOSFET, NCHANNEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTH4L020N090SC1
Detailed Description
SILICON CARBIDE MOSFET, NCHANNEL
Package
TO-247-4L
Lifecycle Status
Active
Datasheet
NTH4L020N090SC1 Datasheet
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Technical Specifications
onsemi NTH4L020N090SC1 MOSFETs technical specifications.
General
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.3V @ 20mA
Gate Charge Qg Max Vgs
196 nC @ 15 V
Vgs Max
+22V, -8V
Input Capacitance Ciss Max Vds
4415 pF @ 450 V
Fet Type
N-Channel
Power Dissipation Max
484W (Tc)
Alternate Parts Comparison (NTH4L020N090SC1 vs NTH4L027N65S3F vs NTH4L075N065SC1 vs NTH4L040N120SC1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-4 | TO-247-4 | TO-247-4 | TO-247-4 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 116A (Tc) | 75A (Tc) | 38A (Tc) | 58A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 900 V | 650 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 15V, 18V | 10V | 15V, 18V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 196 nC @ 15 V | 259 nC @ 10 V | 61 nC @ 18 V | 106 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 4415 pF @ 450 V | 7690 pF @ 400 V | 1196 pF @ 325 V | 1762 pF @ 800 V |
| Action |
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