onsemi NTH4L080N120SC1 MOSFETs
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L, 450-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTH4L080N120SC1
Detailed Description
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L, 450-TUBE
Package
TO-247-4L
Lifecycle Status
Active
Datasheet
NTH4L080N120SC1 Datasheet
Quick Jump:
Technical Specifications
onsemi NTH4L080N120SC1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.3V @ 5mA
Gate Charge Qg Max Vgs
56 nC @ 20 V
Vgs Max
+25V, -15V
Input Capacitance Ciss Max Vds
1670 pF @ 800 V
Alternate Parts Comparison (NTH4L080N120SC1 vs NTH4L027N65S3F vs NTH4L075N065SC1 vs NTH4L040N120SC1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-4 | TO-247-4 | TO-247-4 | TO-247-4 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Current Continuous Drain ID 25 C | 29A (Tc) | 75A (Tc) | 38A (Tc) | 58A (Tc) |
| Drain to Source Voltage Vdss | 1200 V | 650 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 10V | 15V, 18V | 20V |
| Fall Time | 5.4 ns | 6 ns | 7 ns | 10 ns |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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