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onsemi NTH4L040N120SC1 MOSFETs

SiC MOSFET, N-Ch, 1200V, 40mΩ, TO-247-4L

840 ActiveonsemiTO-247-4L$41.31
NTH4L040N120SC1 - No Image Available

Same model may have multiple batches, images only for reference.

NTH4L040N120SC1
Manufacturer
Part Number (MPN)
NTH4L040N120SC1
Detailed Description
SiC MOSFET, N-Ch, 1200V, 40mΩ, TO-247-4L
Package
TO-247-4L
Lifecycle Status
Active
Datasheet
PDF NTH4L040N120SC1 Datasheet
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Technical Specifications

onsemi NTH4L040N120SC1 MOSFETs technical specifications.

General

Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.3V @ 10mA
Gate Charge Qg Max Vgs
106 nC @ 20 V
Vgs Max
+25V, -15V
Input Capacitance Ciss Max Vds
1762 pF @ 800 V
Fet Type
N-Channel
Power Dissipation Max
319W (Tc)

Alternate Parts Comparison (NTH4L040N120SC1 vs NTH4L027N65S3F vs NTH4L075N065SC1 vs NTH4L080N120SC1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-4TO-247-4TO-247-4TO-247-4
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C58A (Tc)75A (Tc)38A (Tc)29A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss1200 V650 V650 V1200 V
Drive Voltage Max Rds on Min Rds on20V10V15V, 18V20V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs106 nC @ 20 V259 nC @ 10 V61 nC @ 18 V56 nC @ 20 V
Input Capacitance Ciss Max Vds1762 pF @ 800 V7690 pF @ 400 V1196 pF @ 325 V1670 pF @ 800 V
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