onsemi NVH4L020N120SC1 MOSFETs
Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, 450-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVH4L020N120SC1
Detailed Description
Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, 450-TUBE
Package
TO-247-4
Lifecycle Status
Active
Datasheet
NVH4L020N120SC1 Datasheet
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Technical Specifications
onsemi NVH4L020N120SC1 MOSFETs technical specifications.
General
Series
NVH4L020N120SC1
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.2 kV
ID Continuous Drain Current
102 A
Rds on Drain Source Resistance
28 mOhms
Alternate Parts Comparison (NVH4L020N120SC1 vs NVH4L022N120M3S vs NVH4L060N065SC1 vs NTA4151PT1H)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Technology | SiC | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -- |
| RoHS | Yes | -- | Yes | Yes |
| Package | TO-247-4 | -- | TO-247-4L | SOT-416 |
| Package / Case | -- | TO-247-4 | TO-247-4 | SC-75, SOT-416 |
| Lifecycle Status | -- | Active | Active | Active |
| Current Continuous Drain ID 25 C | -- | 68A (Tc) | 47A (Tc) | 760mA (Tj) |
| Drain to Source Voltage Vdss | -- | 1200 V | 650 V | 20 V |
| Drive Voltage Max Rds on Min Rds on | -- | 18V | 15V, 18V | 1.8V, 4.5V |
| Fet Type | -- | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | -- | 151 nC @ 18 V | 74 nC @ 18 V | 2.1 nC @ 4.5 V |
| Action |
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