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onsemi NVH4L020N120SC1 MOSFETs

Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, 450-TUBE

292 ActiveonsemiTO-247-4$66.81
NVH4L020N120SC1 TO-247-4 package illustration

Same model may have multiple batches, images only for reference.

NVH4L020N120SC1
Manufacturer
Part Number (MPN)
NVH4L020N120SC1
Detailed Description
Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, 450-TUBE
Package
TO-247-4
Lifecycle Status
Active
Datasheet
PDF NVH4L020N120SC1 Datasheet
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Technical Specifications

onsemi NVH4L020N120SC1 MOSFETs technical specifications.

General

Series
NVH4L020N120SC1
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.2 kV
ID Continuous Drain Current
102 A
Rds on Drain Source Resistance
28 mOhms

Alternate Parts Comparison (NVH4L020N120SC1 vs NVH4L022N120M3S vs NVH4L060N065SC1 vs NTA4151PT1H)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
TechnologySiCSiCFET (Silicon Carbide)SiCFET (Silicon Carbide)MOSFET (Metal Oxide)
Operating Temperature- 55°C ~ + 175°C-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)--
RoHSYes--YesYes
PackageTO-247-4--TO-247-4LSOT-416
Package / Case--TO-247-4TO-247-4SC-75, SOT-416
Lifecycle Status--ActiveActiveActive
Current Continuous Drain ID 25 C--68A (Tc)47A (Tc)760mA (Tj)
Drain to Source Voltage Vdss--1200 V650 V20 V
Drive Voltage Max Rds on Min Rds on--18V15V, 18V1.8V, 4.5V
Fet Type--N-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs--151 nC @ 18 V74 nC @ 18 V2.1 nC @ 4.5 V
Action

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