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onsemi NTJD5121NT2G MOSFETs

Dual N-Ch JFET, 60V, 295mA, 1.6R, SOT-363

432,000 ActiveonsemiNTJD5121NTSOT-363$0.13
NTJD5121NT2G - No Image Available

Same model may have multiple batches, images only for reference.

NTJD5121NT2G
Manufacturer
Part Number (MPN)
NTJD5121NT2G
Base Model
Detailed Description
Dual N-Ch JFET, 60V, 295mA, 1.6R, SOT-363
Package
SOT-363
Lifecycle Status
Active
Datasheet
PDF NTJD5121NT2G Datasheet
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Ordering Code Family

NTJD5121NT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi NTJD5121NT2G MOSFETs technical specifications.

General

Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
2.5V @ 250µA
Gate Charge Qg Max Vgs
0.9nC @ 4.5V
Input Capacitance Ciss Max Vds
26pF @ 20V
Power Max
250mW
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)

Alternate Parts Comparison (NTJD5121NT2G vs NTJD5121NT1G vs NTJD4158CT1G vs NTJD4401NT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-TSSOP------
Mounting TypeSurface Mount------
Operating Temperature-55°C ~ 150°C (TJ)------
Lifecycle StatusActive------
Configuration2 N-Channel (Dual)------
Current Continuous Drain ID 25 C295mA------
DescriptionMOSFET 2N-CH 60V 0.295A SC88------
Detailed DescriptionMosfet Array 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363------
Drain to Source Voltage Vdss60V------
Fet FeatureLogic Level Gate------
Gate Charge Qg Max Vgs0.9nC @ 4.5V------
Input Capacitance Ciss Max Vds26pF @ 20V------
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