onsemi NTH4L014N120M3P MOSFETs
SIC MOSFET 1200 V 14 MOHM M3P SE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTH4L014N120M3P
Detailed Description
SIC MOSFET 1200 V 14 MOHM M3P SE
Package
TO-247-4
Lifecycle Status
Active
Datasheet
NTH4L014N120M3P Datasheet
Quick Jump:
Technical Specifications
onsemi NTH4L014N120M3P MOSFETs technical specifications.
General
Series
NTH4L014N120M3P
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.2 kV
ID Continuous Drain Current
127 A
Rds on Drain Source Resistance
20 mOhms
Alternate Parts Comparison (NTH4L014N120M3P vs NTH4L027N65S3F vs NTH4L075N065SC1 vs NTH4L040N120SC1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | NTH4L014N120M3P | FRFET®, SuperFET® III | NTH4L075N065SC1 | NTH4L040N120SC1 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Fall Time | 13 ns | 6 ns | 7 ns | 10 ns |
| Forward Transconductance Min | 29 S | 56 S | 9 S | 20 S |
| ID Continuous Drain Current | 127 A | 75 A | 38 A | 58 A |
| Package | TO-247-4 | TO-247-4 | TO-247-4 | TO-247-4 |
| Pd Power Dissipation | 686 W | 595 W | 148 W | 319 W |
| Qg Gate Charge | 329 nC | 259 nC | 61 nC | 106 nC |
| Action |
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