onsemi NTH4L028N170M1 MOSFETs
SIC MOSFET 1700 V 28 MOHM M1 SER
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTH4L028N170M1
Detailed Description
SIC MOSFET 1700 V 28 MOHM M1 SER
Package
TO-247-4
Lifecycle Status
Active
Datasheet
NTH4L028N170M1 Datasheet
Quick Jump:
Technical Specifications
onsemi NTH4L028N170M1 MOSFETs technical specifications.
General
Series
NTH4L028N170M1
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.7 kV
ID Continuous Drain Current
81 A
Rds on Drain Source Resistance
40 mOhms
Alternate Parts Comparison (NTH4L028N170M1 vs NTH4L020N120SC1 vs NTH4L040N120SC1 vs NTH4L027N65S3F)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | NTH4L028N170M1 | NTH4L020N120SC1 | NTH4L040N120SC1 | FRFET®, SuperFET® III |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 13 ns | 10 ns | 10 ns | 6 ns |
| Forward Transconductance Min | 31 S | 3.6 S | 20 S | 56 S |
| ID Continuous Drain Current | 81 A | 102 A | 58 A | 75 A |
| Package | TO-247-4 | TO-247-4 | TO-247-4 | TO-247-4 |
| Pd Power Dissipation | 535 W | 510 W | 319 W | 595 W |
| Action |
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