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onsemi NTH4L060N065SC1 MOSFETs

SIC MOS TO247-4L 650V

1 ActiveonsemiTO-247-4L$23.53
NTH4L060N065SC1 TO-247-4L package illustration

Same model may have multiple batches, images only for reference.

NTH4L060N065SC1
Manufacturer
Part Number (MPN)
NTH4L060N065SC1
Detailed Description
SIC MOS TO247-4L 650V
Package
TO-247-4L
Lifecycle Status
Active
Datasheet
PDF NTH4L060N065SC1 Datasheet
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Technical Specifications

onsemi NTH4L060N065SC1 MOSFETs technical specifications.

General

Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.3V @ 6.5mA
Gate Charge Qg Max Vgs
74 nC @ 18 V
Vgs Max
+22V, -8V
Input Capacitance Ciss Max Vds
1473 pF @ 325 V
Fet Type
N-Channel
Power Dissipation Max
176W (Tc)

Related Parts Comparison (NTH4L060N065SC1 vs NTH4L020N120SC1 vs NTH4L040N120SC1 vs NTH4L027N65S3F)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-247-4TO-247-4TO-247-4TO-247-4
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C47A (Tc)102A (Tc)58A (Tc)75A (Tc)
Drain to Source Voltage Vdss650 V1200 V1200 V650 V
Drive Voltage Max Rds on Min Rds on15V, 18V20V20V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs74 nC @ 18 V220 nC @ 20 V106 nC @ 20 V259 nC @ 10 V
Input Capacitance Ciss Max Vds1473 pF @ 325 V2943 pF @ 800 V1762 pF @ 800 V7690 pF @ 400 V
Power Dissipation Max176W (Tc)510W (Tc)319W (Tc)595W (Tc)
Rds on Max ID Vgs70mOhm @ 20A, 18V28mOhm @ 60A, 20V56mOhm @ 35A, 20V27.4mOhm @ 35A, 10V
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