onsemi NSVTB60BDW1T1G BJTs
PNP General Purpose and NPN Bias Resistor Transistor Combination, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVTB60BDW1T1G
Detailed Description
PNP General Purpose and NPN Bias Resistor Transistor Combination, 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
NSVTB60BDW1T1G Datasheet
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Technical Specifications
onsemi NSVTB60BDW1T1G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Grade
Automotive
Transistor Type
1 NPN Pre-Biased, 1 PNP
Qualification
AEC-Q101
Current Collector IC Max
150mA
Alternate Parts Comparison (NSVTB60BDW1T1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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