onsemi NST65011MW6T1G BJTs
DUAL MATCHED NPN XSTR 65V, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NST65011MW6T1G
Detailed Description
DUAL MATCHED NPN XSTR 65V, 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
NST65011MW6T1G Datasheet
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Technical Specifications
onsemi NST65011MW6T1G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 2mA, 5V
Power Max
380mW
Frequency Transition
100MHz
Transistor Type
2 NPN (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
65V
Alternate Parts Comparison (NST65011MW6T1G vs NSVMUN5331DW1T1G vs NSVMUN5211DW1T3G vs NSVMUN5213DW1T3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-TSSOP | 6-TSSOP | 6-TSSOP | 6-TSSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 15nA (ICBO) | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 200 @ 2mA, 5V | 8 @ 5mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V |
| Description | TRANS 2NPN 65V 100MA SC88/SC70 | TRANS PREBIAS 1NPN 1PNP SOT-363 | TRANS PREBIAS 2NPN 50V SOT-363 | TRANS PREBIAS 2NPN 50V SOT-363 |
| Detailed Description | Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
| Power Max | 380mW | 250mW | 250mW | 250mW |
| Transistor Type | 2 NPN (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation Max Ib IC | 600mV @ 5mA, 100mA | 250mV @ 5mA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 65V | 50V | 50V | 50V |
| Action |
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