onsemi BC847BDW1T1G BJTs
NPN BJT Transistor 45V 100mA 380mW 100MHz SOT-363-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC847BDW1T1G
Base Model
Detailed Description
NPN BJT Transistor 45V 100mA 380mW 100MHz SOT-363-6
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
BC847BDW1T1G Datasheet
Quick Jump:
Technical Specifications
onsemi BC847BDW1T1G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 2mA, 5V
Power Max
380mW
Frequency Transition
100MHz
Transistor Type
2 NPN (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
45V
Alternate Parts Comparison (BC847BDW1T1G vs BC847BDW1T3G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | 6 | 3 |
| RoHS | -- | -- | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | -- | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | -- | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | -- | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -- | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | -- | 45 V | 45 V |
| Contact Plating | -- | -- | Tin | Tin |
| Current Rating | -- | -- | 100 mA | 100 mA |
| Element Configuration | -- | -- | Dual | Single |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
NSVMUN5316DW1T1Gonsemi100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN