onsemi MUN5132DW1T1G BJTs
TRANS 2PNP PREBIAS 0.25W SC88
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MUN5132DW1T1G
Detailed Description
TRANS 2PNP PREBIAS 0.25W SC88
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
MUN5132DW1T1G Datasheet
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Technical Specifications
onsemi MUN5132DW1T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Transistor Type
2 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Alternate Parts Comparison (MUN5132DW1T1G vs MUN5211T1G vs MUN5314DW1T1G vs MUN5136T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-TSSOP | SC-70, SOT-323 | 6-TSSOP | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100 mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 15 @ 5mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 250mW | 202 mW | 250mW | 202 mW |
| Resistor Base R1 | 4.7kOhms | 10 kOhms | 10kOhms | 100 kOhms |
| Resistor Emitter Base R2 | 4.7kOhms | 10 kOhms | 47kOhms | 100 kOhms |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | NPN - Pre-Biased | 1 NPN, 1 PNP - Pre-Biased (Dual) | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 250mV @ 1mA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50V | 50 V | 50V | 50 V |
| Action |
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