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onsemi MUN5132DW1T1G BJTs

TRANS 2PNP PREBIAS 0.25W SC88

810,000 Activeonsemi6-TSSOP, SC-88, SOT-363$0.06
MUN5132DW1T1G - No Image Available

Same model may have multiple batches, images only for reference.

MUN5132DW1T1G
Manufacturer
Part Number (MPN)
MUN5132DW1T1G
Detailed Description
TRANS 2PNP PREBIAS 0.25W SC88
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
PDF MUN5132DW1T1G Datasheet
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Technical Specifications

onsemi MUN5132DW1T1G BJTs technical specifications.

General

Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Transistor Type
2 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
50V

Alternate Parts Comparison (MUN5132DW1T1G vs MUN5211T1G vs MUN5314DW1T1G vs MUN5136T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature---55 °C ~ 150 °C----
Number of Pins--3----
RoHS--Compliant----
Lifecycle StatusActiveActiveActive--
China ROHS--Compliant----
Collector Emitter Breakdown Voltage--50 V----
Collector Emitter Voltage Vceo--50 V----
Contact Plating--Tin----
Continuous Collector Current--100 mA----
Current Rating--100 mA----
Element Configuration--Single----
Halogen Free--Halogen Free----
Action

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