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onsemi NSVMUN5331DW1T1G BJTs

Complementary Bipolar Digital Transistor (BRT), 3000-REEL

756,000 Activeonsemi6-TSSOP, SC-88, SOT-363$0.07
NSVMUN5331DW1T1G 6-TSSOP, SC-88, SOT-363 package illustration

Same model may have multiple batches, images only for reference.

NSVMUN5331DW1T1G
Manufacturer
Part Number (MPN)
NSVMUN5331DW1T1G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
PDF NSVMUN5331DW1T1G Datasheet
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Technical Specifications

onsemi NSVMUN5331DW1T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification
AEC-Q101

Related Parts Comparison (NSVMUN5331DW1T1G vs NSVMUN5316DW1T1G vs NSVMUN5211DW1T3G vs NSVMUN5213DW1T3G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case6-TSSOP6-TSSOP6-TSSOP6-TSSOP
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100mA100mA100mA100mA
Dc Current Gain Hfe Min IC Vce8 @ 5mA, 10V160 @ 5mA, 10V35 @ 5mA, 10V80 @ 5mA, 10V
GradeAutomotiveAutomotiveAutomotiveAutomotive
PackageSOT-363-6TSSOP-6SC-88SOT-363-6
Power Max250mW250mW250mW250mW
QualificationAEC-Q101AEC-Q101AEC-Q101AEC-Q101
Resistor Base R12.2kOhms4.7kOhms10kOhms47kOhms
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