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onsemi NSVMMUN2235LT1G BJTs

NPN Bipolar Digital Transistor (BRT) NPN Digital Transistor (BRT), 3000-REEL

35 ActiveonsemiTO-236-3, SC-59, SOT-23-3$0.39
NSVMMUN2235LT1G - No Image Available

Same model may have multiple batches, images only for reference.

NSVMMUN2235LT1G
Manufacturer
Part Number (MPN)
NSVMMUN2235LT1G
Detailed Description
NPN Bipolar Digital Transistor (BRT) NPN Digital Transistor (BRT), 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF NSVMMUN2235LT1G Datasheet
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Technical Specifications

onsemi NSVMMUN2235LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
246 mW
Transistor Type
NPN - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA

Alternate Parts Comparison (NSVMMUN2235LT1G vs NSVMMUN2112LT1G vs NSVMMUN2135LT1G vs NSVMMUN2230LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100 mA100 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V60 @ 5mA, 10V80 @ 5mA, 10V3 @ 5mA, 10V
GradeAutomotiveAutomotiveAutomotiveAutomotive
Power Max246 mW246 mW246 mW246 mW
QualificationAEC-Q101AEC-Q101AEC-Q101AEC-Q101
Resistor Base R12.2 kOhms22 kOhms2.2 kOhms1 kOhms
Resistor Emitter Base R247 kOhms22 kOhms47 kOhms1 kOhms
Resistors IncludedR1 and R2R1 and R2R1 and R2R1 and R2
Action

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