onsemi NSVMMUN2233LT3G BJTs
NPN Bipolar Digital Transistor (BRT), 10000-REEL

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVMMUN2233LT3G
Detailed Description
NPN Bipolar Digital Transistor (BRT), 10000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
NSVMMUN2233LT3G Datasheet
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Technical Specifications
onsemi NSVMMUN2233LT3G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
246 mW
Transistor Type
NPN - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA
Alternate Parts Comparison (NSVMMUN2233LT3G vs NSVMMUN2112LT1G vs NSVMMUN2135LT1G vs NSVMMUN2230LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100 mA | 100 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 60 @ 5mA, 10V | 80 @ 5mA, 10V | 3 @ 5mA, 10V |
| Grade | Automotive | Automotive | Automotive | Automotive |
| Power Max | 246 mW | 246 mW | 246 mW | 246 mW |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Resistor Base R1 | 4.7 kOhms | 22 kOhms | 2.2 kOhms | 1 kOhms |
| Resistor Emitter Base R2 | 47 kOhms | 22 kOhms | 47 kOhms | 1 kOhms |
| Resistors Included | R1 and R2 | R1 and R2 | R1 and R2 | R1 and R2 |
| Action |
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