onsemi NSVBC848CLT1G BJTs
100 mA, 30 V, NPN Bipolar Junction Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVBC848CLT1G
Detailed Description
100 mA, 30 V, NPN Bipolar Junction Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
NSVBC848CLT1G Datasheet
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Technical Specifications
onsemi NSVBC848CLT1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
225 mW
Frequency Transition
100MHz
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101
Alternate Parts Comparison (NSVBC848CLT1G vs NSVBC857BLT3G vs SMMBFJ175LT1G vs 50C02CH-TL-E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Power Max | 225 mW | 225 mW | 225 mW | 700 mW |
| Current Collector Cutoff Max | 15nA (ICBO) | 15nA (ICBO) | -- | 100nA (ICBO) |
| Current Collector IC Max | 100 mA | 100 mA | -- | 500 mA |
| Dc Current Gain Hfe Min IC Vce | 200 @ 2mA, 5V | 220 @ 2mA, 5V | -- | 300 @ 10mA, 2V |
| Frequency Transition | 100MHz | 100MHz | -- | 500MHz |
| Transistor Type | NPN | PNP | -- | NPN |
| Vce Saturation Max Ib IC | 600mV @ 5mA, 100mA | 650mV @ 5mA, 100mA | -- | 100mV @ 10mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 30 V | 45 V | -- | 50 V |
| Action |
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