onsemi NSVBC114YDXV6T1G BJTs
Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVBC114YDXV6T1G
Detailed Description
Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
Package
SOT-563
Lifecycle Status
Active
Datasheet
NSVBC114YDXV6T1G Datasheet
Quick Jump:
Technical Specifications
onsemi NSVBC114YDXV6T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Grade
Automotive
Transistor Type
2 NPN - Pre-Biased (Dual)
Qualification
AEC-Q101
Alternate Parts Comparison (NSVBC114YDXV6T1G vs BC858CDXV6T1G vs NSBC114YPDXV6T1G vs NSBC114TDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 15nA (ICBO) | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 420 @ 2mA, 5V | 80 @ 5mA, 10V | 160 @ 5mA, 10V |
| Power Max | 500mW | 500mW | 500mW | 500mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | 2 PNP (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 650mV @ 5mA, 100mA | 250mV @ 300µA, 10mA | 250mV @ 1mA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50V | 30V | 50V | 50V |
| RoHS | Yes | Yes | -- | Yes |
| Package | SOT-563 | SOT-563 | -- | SOT-563-6 |
| Action |
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