onsemi NSBC123EDXV6T1G BJTs
50V Dual NPN Bipolar Digital Transistor, SOT-563, 6 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSBC123EDXV6T1G
Detailed Description
50V Dual NPN Bipolar Digital Transistor, SOT-563, 6 LEAD, 4000-REEL
Package
SOT-563
Lifecycle Status
Active
Datasheet
NSBC123EDXV6T1G Datasheet
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Technical Specifications
onsemi NSBC123EDXV6T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
8 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Transistor Type
2 NPN - Pre-Biased (Dual)
Current Collector IC Max
100mA
Alternate Parts Comparison (NSBC123EDXV6T1G vs NSBC113EPDXV6T1G vs NSBC114TDXV6T1G vs NSBC114YPDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-563, SOT-666 | -- | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | -- | 500nA | 500nA |
| Current Collector IC Max | 100mA | -- | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 8 @ 5mA, 10V | -- | 160 @ 5mA, 10V | 80 @ 5mA, 10V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 500mW | -- | 500mW | 500mW |
| Resistor Base R1 | 2.2kOhms | -- | 10kOhms | 10kOhms |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | -- | 2 NPN - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation Max Ib IC | 250mV @ 5mA, 10mA | -- | 250mV @ 1mA, 10mA | 250mV @ 300µA, 10mA |
| Action |
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