onsemi BC858CDXV6T1G BJTs
PNP BJT Transistor, SOT-563, 30V, 100mA, 100MHz, 420hFE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC858CDXV6T1G
Detailed Description
PNP BJT Transistor, SOT-563, 30V, 100mA, 100MHz, 420hFE
Package
SOT-563
Lifecycle Status
Active
Datasheet
BC858CDXV6T1G Datasheet
Quick Jump:
Technical Specifications
onsemi BC858CDXV6T1G BJTs technical specifications.
General
Series
BC858CDXV6
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
420 @ 2mA, 5V
Power Max
500mW
Frequency Transition
100MHz
Transistor Type
2 PNP (Dual)
Alternate Parts Comparison (BC858CDXV6T1G vs BC847CDW1T1G vs BC847CLT1G vs BC847ALT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 3 | 3 |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Production | Production | Production |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | 30 V | 50 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 45 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | 650 mV | 600 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 45 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | 100 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Single | Single |
| Action |
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