onsemi NSBA115EDXV6T1G BJTs
Dual PNP Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSBA115EDXV6T1G
Detailed Description
Dual PNP Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
Package
SOT-563
Lifecycle Status
Active
Datasheet
NSBA115EDXV6T1G Datasheet
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Technical Specifications
onsemi NSBA115EDXV6T1G BJTs technical specifications.
General
Series
NSBA115EDXV6
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 150°C
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Related Parts Comparison (NSBA115EDXV6T1G vs NSBA114EDXV6T1G vs NSBA114YDXV6T1G vs NSBA124EDXV6T1G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 60 @ 5mA, 10V |
| Package | SOT-563 | SOT-563 | SOT-563 | SOT-563 |
| Power Max | 500mW | 500mW | 500mW | 500mW |
| Resistor Base R1 | 100kOhms | 10kOhms | 10kOhms | 22kOhms |
| Resistor Emitter Base R2 | 100kOhms | 10kOhms | 47kOhms | 22kOhms |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) |
| Action |
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