onsemi NSBC113EPDXV6T1G BJTs
50V Dual Bipolar Digital Transistor, SOT-563, 6 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSBC113EPDXV6T1G
Detailed Description
50V Dual Bipolar Digital Transistor, SOT-563, 6 LEAD, 4000-REEL
Package
SOT-563
Lifecycle Status
Active
Datasheet
NSBC113EPDXV6T1G Datasheet
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Technical Specifications
onsemi NSBC113EPDXV6T1G BJTs technical specifications.
General
RoHS
Yes
Lifecycle Status
Active
Compliance
PbAHP
Case Outline
463A-01
MSL Type
1
MSL Temp C
260
Container Type
REEL
Container Qty
4000
On Target
N
Polarity
Complementary
Related Parts Comparison (NSBC113EPDXV6T1G vs NSBC114YPDXV6T1G vs NSBC115EDXV6T1G vs NSBC123EDXV6T1G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Lifecycle Status | Active | Active | Active | Active |
| RoHS | Yes | -- | Yes | Yes |
| Package | SOT-563 | -- | SOT-563 | SOT-563 |
| Package / Case | -- | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | -- | Surface Mount | Surface Mount | Surface Mount |
| Current Collector Cutoff Max | -- | 500nA | 500nA | 500nA |
| Current Collector IC Max | -- | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | -- | 80 @ 5mA, 10V | 80 @ 5mA, 10V | 8 @ 5mA, 10V |
| Power Max | -- | 500mW | 500mW | 500mW |
| Resistor Base R1 | -- | 10kOhms | 100kOhms | 2.2kOhms |
| Resistor Emitter Base R2 | -- | 47kOhms | 100kOhms | 2.2kOhms |
| Transistor Type | -- | 1 NPN, 1 PNP - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) |
| Action |
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