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onsemi NSV1C201MZ4T1G BJTs

NPN BJT 100V 2A SOT-223 Low VCE(sat) Transistor

4,700 ActiveonsemiTO-261-4, TO-261AA$0.86
NSV1C201MZ4T1G - No Image Available

Same model may have multiple batches, images only for reference.

NSV1C201MZ4T1G
Manufacturer
Part Number (MPN)
NSV1C201MZ4T1G
Detailed Description
NPN BJT 100V 2A SOT-223 Low VCE(sat) Transistor
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF NSV1C201MZ4T1G Datasheet
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Technical Specifications

onsemi NSV1C201MZ4T1G BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 500mA, 2V
Power Max
800 mW
Frequency Transition
100MHz
Transistor Type
NPN
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
100 V

Alternate Parts Comparison (NSV1C201MZ4T1G vs NSV45060JDT4G vs NSV45020T1G vs NSV45020AT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AATO-252-3, DPakSOD-123SOD-123
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 150°C-55°C ~ 150°C
Accuracy--±15%±15%±10%
Function--Current RegulatorCurrent RegulatorCurrent Regulator
Input Voltage--45V45V45V
Output Current--100mA20mA20mA
Sensing Method--High/Low-SideHigh/Low-SideHigh/Low-Side
Package--TO-252-3, DPak (2 Leads + Tab), SC-63SOD-123--
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