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onsemi BCP68T1G BJTs

NPN BJT 20V 1A SOT-223 Transistor

6,750 ActiveonsemiTO-261-4, TO-261AA$0.23
BCP68T1G - No Image Available

Same model may have multiple batches, images only for reference.

BCP68T1G
Manufacturer
Part Number (MPN)
BCP68T1G
Detailed Description
NPN BJT 20V 1A SOT-223 Transistor
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF BCP68T1G Datasheet
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Technical Specifications

onsemi BCP68T1G BJTs technical specifications.

General

RoHS
True
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
85 @ 500mA, 1V
Power Max
1.5 W
Frequency Transition
60MHz
Transistor Type
NPN
Current Collector IC Max
1 A

Alternate Parts Comparison (BCP68T1G vs BCP56T1G vs BCP56-16T1G vs PZT3904T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max1 A1 A1 A200 mA
Dc Current Gain Hfe Min IC Vce85 @ 500mA, 1V40 @ 150mA, 2V100 @ 150mA, 2V100 @ 10mA, 1V
Description--------
Detailed Description--------
Frequency Transition60MHz130MHz130MHz300MHz
Power Max1.5 W1.5 W1.5 W1.5 W
Transistor TypeNPNNPNNPNNPN
Vce Saturation Max Ib IC500mV @ 100mA, 1A500mV @ 50mA, 500mA500mV @ 50mA, 500mA300mV @ 5mA, 50mA
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