onsemi NSS60600MZ4T1G BJTs
PNP BJT Transistor, 60V, 6A, 100MHz, SOT-223
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSS60600MZ4T1G
Base Model
Detailed Description
PNP BJT Transistor, 60V, 6A, 100MHz, SOT-223
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
NSS60600MZ4T1G Datasheet
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Technical Specifications
onsemi NSS60600MZ4T1G BJTs technical specifications.
General
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 1A, 2V
Power Max
800 mW
Frequency Transition
100MHz
Transistor Type
PNP
Current Collector IC Max
6 A
Voltage Collector Emitter Breakdown Max
60 V
Alternate Parts Comparison (NSS60600MZ4T1G vs NSS60600MZ4T3G vs MMJT350T1G vs PZT3904T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 6 A | 6 A | 500 mA | 200 mA |
| Dc Current Gain Hfe Min IC Vce | 120 @ 1A, 2V | 120 @ 1A, 2V | 30 @ 50mA, 10V | 100 @ 10mA, 1V |
| Description | TRANS PNP 60V 6A SOT223 | TRANS PNP 60V 6A SOT223 | TRANS PNP 300V 0.5A SOT223 | TRANS NPN 40V 0.2A SOT223 |
| Detailed Description | Bipolar (BJT) Transistor PNP 60 V 6 A 100MHz 800 mW Surface Mount SOT-223 (TO-261) | Bipolar (BJT) Transistor PNP 60 V 6 A 100MHz 800 mW Surface Mount SOT-223 (TO-261) | Bipolar (BJT) Transistor PNP 300 V 500 mA 650 mW Surface Mount SOT-223 (TO-261) | Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 1.5 W Surface Mount SOT-223 (TO-261) |
| Power Max | 800 mW | 800 mW | 650 mW | 1.5 W |
| Transistor Type | PNP | PNP | PNP | NPN |
| Voltage Collector Emitter Breakdown Max | 60 V | 60 V | 300 V | 40 V |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | -- |
| Action |
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