onsemi NJT4031NT3G BJTs
3.0 A, 40 V NPN Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJT4031NT3G
Base Model
Detailed Description
3.0 A, 40 V NPN Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
NJT4031NT3G Datasheet
Quick Jump:
Technical Specifications
onsemi NJT4031NT3G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 1A, 1V
Power Max
2 W
Frequency Transition
215MHz
Transistor Type
NPN
Current Collector IC Max
3 A
Alternate Parts Comparison (NJT4031NT3G vs NJT4031NT1G vs NJT4030PT3G vs NJT4030PT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Production | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 3 A | 3 A | 3 A | 3 A |
| Dc Current Gain Hfe Min IC Vce | 200 @ 1A, 1V | 200 @ 1A, 1V | 200 @ 1A, 1V | 200 @ 1A, 1V |
| Power Max | 2 W | 2 W | 2 W | 2 W |
| Transistor Type | NPN | NPN | PNP | PNP |
| Vce Saturation Max Ib IC | 300mV @ 300mA, 3A | 300mV @ 300mA, 3A | 500mV @ 300mA, 3A | 500mV @ 300mA, 3A |
| Voltage Collector Emitter Breakdown Max | 40 V | 40 V | 40 V | 40 V |
| RoHS | Yes | Yes | Compliant | -- |
| Action |
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