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onsemi NJV4030PT3G BJTs

Bipolar Power Transistors, PNP, 3.0 A, 40 V, SOT-223 (TO-261) 4 LEAD, 4000-REEL

3,098 ActiveonsemiNJV4030PTTO-261-4, TO-261AA$0.20
NJV4030PT3G - No Image Available

Same model may have multiple batches, images only for reference.

NJV4030PT3G
Manufacturer
Part Number (MPN)
NJV4030PT3G
Base Model
Detailed Description
Bipolar Power Transistors, PNP, 3.0 A, 40 V, SOT-223 (TO-261) 4 LEAD, 4000-REEL
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF NJV4030PT3G Datasheet
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Ordering Code Family

NJV4030PT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi NJV4030PT3G BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
2 W
Frequency Transition
160MHz
Grade
Automotive
Transistor Type
PNP
Qualification
AEC-Q101
Current Collector IC Max
3 A

Alternate Parts Comparison (NJV4030PT3G vs NJV4030PT1G vs NJVNJD2873T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate Parts
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 175°C (TJ)
Number of Pins----3
RoHS----Compliant
Lifecycle StatusActiveActiveActive
China ROHS----Non-Compliant
Collector Base Voltage Vcbo----50 V
Collector Emitter Breakdown Voltage----50 V
Collector Emitter Saturation Voltage----300 mV
Collector Emitter Voltage Vceo----50 V
Contact Plating----Tin
Element Configuration----Single
Emitter Base Voltage Vebo----5 V
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