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onsemi NST857BDP6T5G BJTs

Dual PNP Bipolar Transistor, SOT-963 1x1, 0.35P, 8000-REEL

8,000 ActiveonsemiSOT-963$0.34
NST857BDP6T5G SOT-963 package illustration

Same model may have multiple batches, images only for reference.

NST857BDP6T5G
Manufacturer
Part Number (MPN)
NST857BDP6T5G
Detailed Description
Dual PNP Bipolar Transistor, SOT-963 1x1, 0.35P, 8000-REEL
Package
SOT-963
Lifecycle Status
Active
Datasheet
PDF NST857BDP6T5G Datasheet
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Technical Specifications

onsemi NST857BDP6T5G BJTs technical specifications.

General

Package / Case
SOT-963
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
220 @ 2mA, 5V
Power Max
350mW
Frequency Transition
100MHz
Transistor Type
2 PNP (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
45V

Related Parts Comparison (NST857BDP6T5G vs NST3906DP6T5G vs NST3946DP6T5G vs NST3904DP6T5G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-963SOT-963SOT-963SOT-963
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max100mA200mA200mA200mA
Dc Current Gain Hfe Min IC Vce220 @ 2mA, 5V100 @ 10mA, 1V100 @ 10mA, 1V100 @ 10mA, 1V
Frequency Transition100MHz250MHz200MHz, 250MHz200MHz
Power Max350mW350mW350mW350mW
Transistor Type2 PNP (Dual)2 PNP (Dual)1 NPN, 1 PNP2 NPN (Dual)
Vce Saturation Max Ib IC700mV @ 5mA, 100mA400mV @ 5mA, 50mA300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA300mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max45V40V40V40V
Package--SOT-963SOT-963SOT-963
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