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onsemi NSBC115TPDP6T5G BJTs

Complementary Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL

432,000 ActiveonsemiSOT-963$0.12
NSBC115TPDP6T5G SOT-963 package illustration

Same model may have multiple batches, images only for reference.

NSBC115TPDP6T5G
Manufacturer
Part Number (MPN)
NSBC115TPDP6T5G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
Package
SOT-963
Lifecycle Status
Active
Datasheet
PDF NSBC115TPDP6T5G Datasheet
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Technical Specifications

onsemi NSBC115TPDP6T5G BJTs technical specifications.

General

Series
NSBC115TPDP6
RoHS
Yes
Number of Channels
2 Channel
Package / Case
SOT-963
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 150°C
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
160 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA

Related Parts Comparison (NSBC115TPDP6T5G vs NSBC114YDP6T5G vs NSBC123JPDP6T5G vs NSBC123JDP6T5G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-963SOT-963SOT-963SOT-963
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100mA100mA100mA100mA
Dc Current Gain Hfe Min IC Vce160 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V
PackageSOT-963-6SOT-963SOT-963SOT-963
Power Max339mW339mW339mW339mW
Resistor Base R1100kOhms10kOhms2.2kOhms2.2kOhms
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)
Vce Saturation Max Ib IC250mV @ 1mA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA
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