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onsemi NSBC123JDP6T5G BJTs

Dual NPN Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL

432,000 ActiveonsemiSOT-963$0.12
NSBC123JDP6T5G SOT-963 package illustration

Same model may have multiple batches, images only for reference.

NSBC123JDP6T5G
Manufacturer
Part Number (MPN)
NSBC123JDP6T5G
Detailed Description
Dual NPN Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
Package
SOT-963
Lifecycle Status
Active
Datasheet
PDF NSBC123JDP6T5G Datasheet
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Technical Specifications

onsemi NSBC123JDP6T5G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-963
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
339mW
Transistor Type
2 NPN - Pre-Biased (Dual)
Current Collector IC Max
100mA

Alternate Parts Comparison (NSBC123JDP6T5G vs NSBC115TPDP6T5G vs NSBC114YDP6T5G vs NSBC123JPDP6T5G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-963SOT-963SOT-963SOT-963
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100mA100mA100mA100mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V160 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V
Description--------
Detailed Description--------
Power Max339mW339mW339mW339mW
Resistor Base R12.2kOhms100kOhms10kOhms2.2kOhms
Transistor Type2 NPN - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)
Vce Saturation Max Ib IC250mV @ 300µA, 10mA250mV @ 1mA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA
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