onsemi NST847BDP6T5G BJTs
Dual NPN Bipolar Transistor, SOT-963 1x1, 0.35P, 8000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NST847BDP6T5G
Detailed Description
Dual NPN Bipolar Transistor, SOT-963 1x1, 0.35P, 8000-REEL
Package
SOT-963
Lifecycle Status
Active
Datasheet
NST847BDP6T5G Datasheet
Quick Jump:
Technical Specifications
onsemi NST847BDP6T5G BJTs technical specifications.
General
Series
NST847BDP6
RoHS
Yes
Package / Case
SOT-963
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 2mA, 5V
Power Max
350mW
Frequency Transition
100MHz
Transistor Type
2 NPN (Dual)
Alternate Parts Comparison (NST847BDP6T5G vs NST3906DP6T5G vs NST3946DP6T5G vs NST3904DP6T5G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-963 | SOT-963 | SOT-963 | SOT-963 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 100mA | 200mA | 200mA | 200mA |
| Dc Current Gain Hfe Min IC Vce | 200 @ 2mA, 5V | 100 @ 10mA, 1V | 100 @ 10mA, 1V | 100 @ 10mA, 1V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Frequency Transition | 100MHz | 250MHz | 200MHz, 250MHz | 200MHz |
| Power Max | 350mW | 350mW | 350mW | 350mW |
| Transistor Type | 2 NPN (Dual) | 2 PNP (Dual) | 1 NPN, 1 PNP | 2 NPN (Dual) |
| Vce Saturation Max Ib IC | 600mV @ 5mA, 100mA | 400mV @ 5mA, 50mA | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA | 300mV @ 5mA, 50mA |
| Action |
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