onsemi NSBA144EDP6T5G BJTs
Dual PNP Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSBA144EDP6T5G
Detailed Description
Dual PNP Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL
Package
SOT-963
Lifecycle Status
Active
Datasheet
NSBA144EDP6T5G Datasheet
Quick Jump:
Technical Specifications
onsemi NSBA144EDP6T5G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SOT-963
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
408mW
Transistor Type
2 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Alternate Parts Comparison (NSBA144EDP6T5G vs NSBA114EDP6T5G vs NST3906DP6T5G vs NST3946DP6T5G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-963 | SOT-963 | SOT-963 | SOT-963 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 100mA | 100mA | 200mA | 200mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 35 @ 5mA, 10V | 100 @ 10mA, 1V | 100 @ 10mA, 1V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 408mW | 338mW | 350mW | 350mW |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP (Dual) | 1 NPN, 1 PNP |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 400mV @ 5mA, 50mA | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA |
| Voltage Collector Emitter Breakdown Max | 50V | 50V | 40V | 40V |
| Action |
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