onsemi NST30010MXV6T1G BJTs
Dual PNP BJT, 30V, 100MHz, SOT-563
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NST30010MXV6T1G
Detailed Description
Dual PNP BJT, 30V, 100MHz, SOT-563
Package
SOT-563
Lifecycle Status
Active
Datasheet
NST30010MXV6T1G Datasheet
Quick Jump:
Technical Specifications
onsemi NST30010MXV6T1G BJTs technical specifications.
General
RoHS
Yes
Number of Pins
6
Package / Case
SOT-563-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
-600 mV
Collector Emitter Voltage Vceo
30 V
Alternate Parts Comparison (NST30010MXV6T1G vs BC858CDXV6T1G vs EMD4DXV6T1G vs NSBA114EDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-563-6 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 15nA (ICBO) | 15nA (ICBO) | 500nA | 500nA |
| Current Collector IC Max | 100 mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 420 @ 2mA, 5V | 420 @ 2mA, 5V | 80 @ 5mA, 10V | 35 @ 5mA, 10V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 500 mW | 500mW | 500mW | 500mW |
| Transistor Type | 2 PNP (Dual) Matched Pair | 2 PNP (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation Max Ib IC | 600mV @ 5mA, 100mA | 650mV @ 5mA, 100mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 30 V | 30V | 50V | 50V |
| Action |
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