onsemi MMJT350T1G BJTs
PNP Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMJT350T1G
Detailed Description
PNP Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
MMJT350T1G Datasheet
Quick Jump:
Technical Specifications
onsemi MMJT350T1G BJTs technical specifications.
General
Series
MMJT350T1
RoHS
Yes
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 10V
Power Max
650 mW
Transistor Type
PNP
Current Collector IC Max
500 mA
Alternate Parts Comparison (MMJT350T1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-261-4, TO-261AA | 6-TSSOP | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Production | Production | Production |
| Collector Base Voltage Vcbo | 300 V | 40 V | 50 V | 50 V |
| Current Collector IC Max | 500 mA | 200mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 30 @ 50mA, 10V | 100 @ 10mA, 1V | 420 @ 2mA, 5V | 420 @ 2mA, 5V |
| Emitter Base Voltage Vebo | 5 V | 5 V | 6 V | 6 V |
| Package | SOT-223-4 | SOT-363-6 | SOT-363-6 | SOT-23-3 |
| Power Max | 650 mW | 150mW | 380mW | 300 mW |
| Transistor Type | PNP | 2 PNP (Dual) | 2 NPN (Dual) | NPN |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
