onsemi MMJT350T1G BJTs
PNP Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMJT350T1G
Detailed Description
PNP Bipolar Power Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
MMJT350T1G Datasheet
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Technical Specifications
onsemi MMJT350T1G BJTs technical specifications.
General
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 10V
Power Max
650 mW
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
300 V
Current Collector Cutoff Max
100nA (ICBO)
Alternate Parts Comparison (MMJT350T1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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