onsemi NSS30100LT1G BJTs
Low VCE(sat) Transistor, PNP, 30 V, 1.0 A, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSS30100LT1G
Detailed Description
Low VCE(sat) Transistor, PNP, 30 V, 1.0 A, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
NSS30100LT1G Datasheet
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Technical Specifications
onsemi NSS30100LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 30V 1A SOT23-3
Detailed Description
Bipolar (BJT) Transistor PNP 30 V 1 A 100MHz 310 mW Surface Mount SOT-23-3 (TO-236)
Dc Current Gain Hfe Min IC Vce
100 @ 500mA, 2V
Power Max
310 mW
Frequency Transition
100MHz
Transistor Type
PNP
Alternate Parts Comparison (NSS30100LT1G vs MMUN2213LT1G vs BC849CLT1G vs MMBT5551LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA | 500nA | 15nA (ICBO) | 100nA |
| Current Collector IC Max | 1 A | 100 mA | 100 mA | 600 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 500mA, 2V | 80 @ 5mA, 10V | 420 @ 2mA, 5V | 80 @ 10mA, 5V |
| Description | TRANS PNP 30V 1A SOT23-3 | TRANS PREBIAS NPN 50V SOT23-3 | TRANS NPN 30V 0.1A SOT23-3 | TRANS NPN 160V 0.6A SOT23-3 |
| Detailed Description | Bipolar (BJT) Transistor PNP 30 V 1 A 100MHz 310 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236) |
| Power Max | 310 mW | 246 mW | 300 mW | 225 mW |
| Transistor Type | PNP | NPN - Pre-Biased | NPN | NPN |
| Vce Saturation Max Ib IC | 650mV @ 200mA, 2A | 250mV @ 300µA, 10mA | 600mV @ 5mA, 100mA | 200mV @ 5mA, 50mA |
| Voltage Collector Emitter Breakdown Max | 30 V | 50 V | 30 V | 160 V |
| Action |
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