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onsemi SMMUN2211LT3G BJTs

NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL

1,800,000 ActiveonsemiSMMUN2211LTSOT-23$0.04
SMMUN2211LT3G - No Image Available

Same model may have multiple batches, images only for reference.

SMMUN2211LT3G
Manufacturer
Part Number (MPN)
SMMUN2211LT3G
Base Model
Detailed Description
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF SMMUN2211LT3G Datasheet
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Ordering Code Family

SMMUN2211LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SMMUN2211LT3G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
246 mW
Transistor Type
NPN - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA

Alternate Parts Comparison (SMMUN2211LT3G vs SMMUN2211LT1G vs BC849CLT1G vs BC846BLT3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3--TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount--Surface MountSurface Mount
Lifecycle StatusActive--ActiveActive
Current Collector Cutoff Max500nA--15nA (ICBO)15nA (ICBO)
Current Collector IC Max100 mA--100 mA100 mA
Dc Current Gain Hfe Min IC Vce35 @ 5mA, 10V--420 @ 2mA, 5V200 @ 2mA, 5V
DescriptionTRANS PREBIAS NPN 50V SOT23-3--TRANS NPN 30V 0.1A SOT23-3TRANS NPN 65V 0.1A SOT23-3
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)--Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Power Max246 mW--300 mW300 mW
Transistor TypeNPN - Pre-Biased--NPNNPN
Vce Saturation Max Ib IC250mV @ 300µA, 10mA--600mV @ 5mA, 100mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max50 V--30 V65 V
Action

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