onsemi BC849CLT1G BJTs
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC849CLT1G
Detailed Description
Reliable BJTs by onsemi, engineered for high-performance systems.
Package
SOT-23
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
BC849CLT1G Datasheet
Quick Jump:
Technical Specifications
onsemi BC849CLT1G BJTs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Packaging
Tape and Reel
Operating Temperature
-55 °C ~ 150 °C
Lifecycle Status
Production
Export Control Classification Number ECCN Code
EAR99
Introduction Date
1999-01-01
Manufacturer Lifecycle Status
ACTIVE
Package
SOT-23
Collector Base Voltage Vcbo
30 V
Alternate Parts Comparison (BC849CLT1G vs BC846BLT3G vs BC807-16LT1G vs BC856BWT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55 °C ~ 150 °C | -- | -55 °C ~ 150 °C | -55 °C ~ 150 °C |
| Number of Pins | 3 | -- | 3 | 3 |
| RoHS | Compliant | -- | Compliant | Compliant |
| Lifecycle Status | Production | -- | Production | Production |
| China ROHS | Compliant | -- | Compliant | Compliant |
| Collector Base Voltage Vcbo | 30 V | -- | 50 V | 80 V |
| Collector Emitter Breakdown Voltage | 30 V | -- | 45 V | 65 V |
| Collector Emitter Saturation Voltage | 600 mV | -- | 700 mV | 650 mV |
| Collector Emitter Voltage Vceo | 30 V | -- | 45 V | 65 V |
| Element Configuration | Single | -- | Single | Single |
| Emitter Base Voltage Vebo | 5 V | -- | 5 V | 5 V |
| Gain Bandwidth | 100 MHz | -- | 100 MHz | 100 MHz |
| Action |
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